AO4482 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 100V N-Channel MOSFET

AO4482
100V N-Channel MOSFET
General Description
The AO4482 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R_DS(ON). This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
Product Summary
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
100% UIS Tested
100% R_g Tested
100V
6A
< 37mΩ
< 42mΩ
SO8
D
Top View
Bottom View
D
D
D
D
G
S
S
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_A=25°C
Current
T_A=70°C
Pulsed Drain Current ^C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_D
I_DM
I_AS, I_AR
E_AS, E_AR
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJL
G
S
Maximum
100
±20
6
5
42
35
61
3.1
2
-55 to 150
Typ
Max
31
40
59
75
16
24
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Rev 3 : Dec 2010
www.aosmd.com
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