AO4480 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO4480
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4480 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge. It is ESD
Protected. This device is suitable for use as a low side
switch in SMPS and general purpose applications.
Standard Product AO4480 is Pb-free (meets ROHS &
Sony 259 specifications).
Features
V_DS (V) = 40V
I_D = 14A (V_GS = 10V)
R_DS(ON) < 11.5mΩ (V_GS = 10V)
R_DS(ON) < 15.5mΩ (V_GS = 4.5V)
ESD Rating: 4KV HBM
UIS Tested
Rg,Ciss,Coss,Crss Tested
S
D
S
D
S
D
G
D
SOIC-8
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^AF
T_A=70°C
I_DSM
Pulsed Drain Current ^B
I_DM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Avalanche Current ^B
I_AR
Repetitive avalanche energy 0.3mH ^B
E_AR
Junction and Storage Temperature Range T_J, T_STG
Maximum
40
±20
14
11
70
3.1
2.0
30
135
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
Symbol
Typ
t ≤ 10s
Steady-State
R_θJA
30
59
Steady-State
R_θJL
16
Max
40
75
24
Units
V
V
A
W
A
mJ
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com