AO4478L Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO4478L
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4478L uses advanced trench technology to
provide excellent R_DS(ON), low gate charge. This
device is suitable for use as general puspose, PWM and
a load switch applications.
-RoHS Compliant
-Halogen Free
Features
V_DS (V) = 30V
I_D = 9A (V_GS = 10V)
R_DS(ON) <19mΩ (V_GS = 10V)
R_DS(ON) <26mΩ (V_GS = 4.5V)
100% UIS Tested!
100% Rg Tested!
SOIC-8
D
D
G
S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TA^=25°C
Current
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
Iar
Repetitive avalanche energy L=0.1mH^C
Ear
Power Dissipation^B
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
30
±25
9.0
7.0
60
17
14
3.1
2.0
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^AD
Maximum Junction-to-Lead ^C
Symbol
Typ
t ≤ 10s
Steady-State
R_θJA
31
59
Steady-State
R_θJL
16
Max
40
75
24
Units
V
V
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com