AO4476 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO4476
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4476 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge.This device
is suitable for use as a high side switch in SMPS and
general purpose applications. Standard Product
AO4476 is Pb-free (meets ROHS & Sony 259
specifications).
Features
V_DS (V) = 30V
I_D = 15A (V_GS = 10V)
R_DS(ON) < 10.5mΩ (V_GS = 10V)
R_DS(ON) < 17mΩ (V_GS = 4.5V)
S
D
S
D
S
D
G
D
SOIC-8
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_DSM
Pulsed Drain Current ^B
I_DM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±20
15
12
60
3.7
2.4
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
28
57
34
71
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
16
23
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.