AO4472 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO4472
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4472 uses advanced trench technology to provide
excellent R_DS(ON), shoot-through immunity, body diode
characteristics and ultra-low gate resistance. This device is
ideally suited for use as a low side switch in Notebook CPU
core power conversion. Standard Product AO4472 is Pb-
free (meets ROHS & Sony 259 specifications). AO4472L is
a Green Product ordering option. AO4472 and AO4472L
are electrically identical.
Features
V_DS (V) = 30V
I_D = 19A (V_GS = 10V)
R_DS(ON) < 5.2mΩ (V_GS = 10V)
R_DS(ON) < 7.2mΩ (V_GS = 4.5V)
S
D
S
D
S
D
G
D
SOIC-8
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±20
19
16
80
3
2.1
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
31
59
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
16
Max
40
75
24
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.