AO4468 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO4468
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4468 uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge. This
device is suitable for use as a load switch or in
PWM applications. The source leads are separated
to allow a Kelvin connection to the source, which
may be used to bypass the source inductance.
Standard Product AO4468 is Pb-free (meets ROHS
& Sony 259 specifications). AO4468L is a Green
Product ordering option. AO4468 and AO4468L are
electrically identical.
Features
V_DS (V) = 30V
I_D = 11.6A
R_DS(ON) < 14mΩ
R_DS(ON) < 22mΩ
(V _GS = 10V)
(V_GS = 10V)
(V_GS = 4.5V)
S
D
S
D
S
D
G
D
SOIC-8
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±20
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
11.6
9.2
50
Power Dissipation
T_A=25°C
T_A=70°C
P_D
3.1
2
Junction and Storage Temperature Range T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
31
59
40
75
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
16
24
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W