AO4456 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO4456
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4456 uses advanced trench technology with a
monolithically integrated Schottky diode to provide
excellent R_DS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications. Standard
Product AO4456 is Pb-free (meets ROHS & Sony
259 specifications). AO4456 is a Green Product
ordering option. AO4456 and AO4456 are electrically
identical.
Features
V_DS (V) = 30V
I_D =20A (V_GS = 10V)
R_DS(ON) < 4.6mΩ (V_GS = 10V)
R_DS(ON) < 5.6mΩ (V_GS = 4.5V)
S
D
S
D
S
D
G
D
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_DSM
Pulsed Drain Current ^B
I_DM
Power Dissipation
T_A=25°C
T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±12
20
16
120
3.1
2.0
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
31
59
40
75
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
16
24
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.