AO4453 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 12V P-Channel MOSFET

AO4453
12V P-Channel MOSFET
General Description
Product Summary
The AO4453 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R_DS(ON). This device is ideal for load switch
and battery protection applications.
V_DS
I_D (at V_GS=-4.5V)
R_DS(ON) (at V_GS =-4.5V)
R_DS(ON) (at V_GS =-3.3V)
R_DS(ON) (at V_GS =-2.5V)
R_DS(ON) (at V_GS =-1.8V)
R_DS(ON) (at V_GS =-1.5V)
100% UIS Tested
100% R_g Tested
-12V
-9A
< 19mΩ
< 22mΩ
< 26mΩ
< 36mΩ
< 50mΩ
SOIC-8
D
Top View
Bottom View
D
D
D
D
G
S
S
S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
V_DS
-12
Gate-Source Voltage
V_GS
±8
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
-9
-7
Pulsed Drain Current ^C
I_DM
-55
Avalanche Current ^C
I_AS
20
Avalanche energy L=0.1mH ^C
E_AS
20
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
2.5
1.6
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
42
70
Maximum Junction-to-Lead
Steady-State
R_θJL
20
Max
50
85
30
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: Oct. 2012
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