AO4449 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AO4449
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4449 uses advanced trench technology to
provide excellent R_DS(ON), and ultra-low low gate
charge. This device is suitable for use as a load
switch or in PWM applications. Standard Product
AO4449 is Pb-free (meets ROHS & Sony 259
specifications).
Features
V_DS (V) = -30V
I_D = -7 A (V_GS = -10V)
R_DS(ON) < 34mΩ (V_GS = -10V)
R_DS(ON) < 54mΩ (V_GS = -4.5V)
SOIC-8
Top View
S
D
S
D
S
D
G
D
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^F
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
-30
±20
-7
-4.6
-40
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
31
60
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
16
Max
40
75
24
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com