AO4447AL Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AO4447AL
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4447AL uses advanced trench technology to
provide excellent R_DS(ON) with low gate charge.This
device is ideal for load switch and battery protection
applications.
-RoHS Compliant
-Halogen Free
Features
V_DS (V) = -30V
I_D = -17A
R_DS(ON) < 7mΩ
R_DS(ON) < 8mΩ
R_DS(ON) < 9mΩ
(V_GS = -10V)
(V_GS = -10V)
(V_GS = -4.5V)
(V_GS = -4V)
ESD Protected!
SOIC-8
D
G
S
Rg
G
Absolute Maximum Ratings T_J=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TA^=25°C
Current
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
Power Dissipation ^{B TA=25°C}
T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
-30
±20
-17
-13
-160
3.1
2.0
-55 to 150
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^AD Steady State
R_θJA
31
59
Maximum Junction-to-Lead
Steady State RθJL
16
Max
40
75
24
D
S
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com