AO4446 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO4446
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4446 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and low
gate resistance. This device is ideally suited for use
in PWM applications. Standard Product AO4446 is
Pb-free (meets ROHS & Sony 259 specifications).
AO4446L is a Green Product ordering option.
AO4446 and AO4446L are electrically identical.
Features
V_DS (V) = 30V
I_D = 15A (V_GS = 10V)
R_DS(ON) < 8.5mΩ (V_GS = 10V)
R_DS(ON) < 14.5mΩ (V_GS = 4.5V)
S
D
S
D
S
D
G
D
SOIC-8
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Avalanche Current ^B
I_AR
Repetitive avalanche energy L=0.1mH ^B
E_AR
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±20
15
12
40
20
50
3
2.1
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
33
59
40
75
Maximum Junction-to-Case ^C
Steady-State
R_θJC
16
24
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.