AO4442 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO4442
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4442 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and
operation with gate voltages from 4.5V to 25V. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO4442 is Pb-free
(meets ROHS & Sony 259 specifications). AO4442L
is a Green Product ordering option. AO4442 and
AO4442L are electrically identical.
Features
V_DS (V) = 75V
I_D = 3.1A (V_GS = 10V)
R_DS(ON) < 130mΩ (V_GS = 10V)
R_DS(ON) < 165mΩ (V_GS = 4.5V)
S
D
S
D
S
D
G
D
SOIC-8
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
75
±25
3.1
2.5
20
2.5
1.6
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
38
69
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
24
Max
50
80
30
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.