AO4435 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AO4435
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4435 uses advanced trench technology to
provide excellent R_DS(ON), and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as
a load switch or in PWM applications. Standard Product
AO4435 is Pb-free (meets ROHS & Sony 259
specifications).
Features
V_DS = -30V
I_D = -10A
(V_GS = -10V)
R_DS(ON) < 18mΩ (V_GS = -10V)
R_DS(ON) < 36mΩ (V_GS = -5V)
SOIC-8
Top View
S
D
S
D
S
D
G
D
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
10 Sec
Steady State
Drain-Source Voltage
V_DS
-30
Gate-Source Voltage
V_GS
±25
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
Pulsed Drain Current ^B
-10
-8
I_D
-8
-6
I_DM
-80
Power Dissipation ^{A TA=25°C}
T_A=70°C
3.1
1.7
P_D
2.0
1.1
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A Steady State
R_θJA
32
60
40
75
Maximum Junction-to-Lead ^C
Steady State RθJL
17
24
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com