AO4425_10 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – 38V P-Channel MOSFET

AO4425
38V P-Channel MOSFET
General Description
The AO4425 uses advanced trench technology to
provide excellent R_DS(ON), and ultra-low low gate
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications. It is
ESD protected.
Product Summary
V_DS (V) = -38V
I_D = -14A (V_GS = -20V)
R_DS(ON) < 10mΩ (V_GS = -20V)
R_DS(ON) < 11mΩ (V_GS = -10V)
ESD Rating: 4000V HBM
100% UIS Tested
100% Rg Tested
Top View
D
D
D
D
SOIC-8
Bottom View
G
S
S
S
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TA^=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
-38
±25
-14
-11
-50
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
26
50
40
75
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
14
24
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com