AO4420A_10 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – 30V N-Channel MOSFET

AO4420A
30V N-Channel MOSFET
General Description
The AO4420A uses advanced trench technology to
provide excellent R_DS(ON), shoot-through immunity
and body diode characteristics. This device is
suitable for use as a synchronous switch in PWM
applications.
Product Summary
V_DS (V) = 30V
I_D = 13.7A (V_GS = 10V)
R_DS(ON) < 10.5mΩ (V_GS = 10V)
R_DS(ON) < 12mΩ (V_GS = 4.5V)
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
Bottom View
D
D
D
D
D
G
S
S
S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TA^=25°C
Current ^AF
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Avalanche Current ^B
I_AR
Repetitive avalanche energy L=0.3mH ^B
E_AR
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±12
13.7
9.7
60
20
60
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
28
54
40
75
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
21
30
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com