AO4420A Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO4420A
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4420A uses advanced trench technology to
provide excellent R_DS(ON), shoot-through immunity and
body diode characteristics.This device is suitable for
use as a synchronous switch in PWM applications.
Standard Product AO4420A is Pb-free (meets ROHS
& Sony 259 specifications).
Features
V_DS (V) = 30V
I_D = 13.7A (V_GS = 10V)
R_DS(ON) < 10.5mΩ (V_GS = 10V)
R_DS(ON) < 12mΩ (V_GS = 4.5V)
UIS Tested
Rg,Ciss,Coss,Crss Tested
S
D
S
D
S
D
G
D
SOIC-8
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^AF
T_A=70°C
I_D
Pulsed Drain Current^B
I_DM
Avalanche Current^B
I_AR
Repetitive avalanche energy L=0.3mH^B
E_AR
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±12
13.7
9.7
60
20
60
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient^A
Maximum Junction-to-Ambient^A
t ≤ 10s
Steady-State
R_θJA
28
54
40
75
Maximum Junction-to-Lead^C
Steady-State
R_θJL
21
30
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com