AO4419 Datasheet, PDF (1/6 Pages) List of Unclassifed Manufacturers – P-Channel Enhancement Mode Field Effect Transistor

AO4419
30V P-Channel MOSFET
General Description
Product Summary
The AO4419 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R_DS(ON). This device is ideal for load switch
and battery protection applications.
V_DS
I_D (at V_GS=-10V)
R_DS(ON) (at V_GS=-10V)
R_DS(ON) (at V_GS = -4.5V)
100% UIS Tested
100% R_g Tested
-30V
-9.7A
< 20mΩ
< 35mΩ
SOIC-8
D
Top View
Bottom View
D
D
D
D
G
S
S
S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
V_DS
-30
Gate-Source Voltage
V_GS
±20
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
-9.7
-7.8
Pulsed Drain Current ^C
I_DM
-70
Avalanche Current ^C
I_AS, I_AR
-27
Avalanche energy L=0.1mH ^C
E_AS, E_AR
36
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
3.1
2
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
31
59
40
75
Maximum Junction-to-Lead
Steady-State
R_θJL
16
24
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Rev 6: May 2011
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