AO4418_07 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO4418
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4418 uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
Standard Product AO4418 is Pb-free (meets ROHS
& Sony 259 specifications).
Features
V_DS (V) = 30V
I_D = 11.5A (V_GS = 20V)
R_DS(ON) < 14mΩ (V_GS = 20V)
R_DS(ON) < 17mΩ (V_GS = 10V)
R_DS(ON) < 40mΩ (V_GS = 4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
S
D
S
D
S
D
G
D
SOIC-8
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^AF
T_A=70°C
I_D
Pulsed Drain Current^B
I_DM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Avalanche Current ^B
I_AR
Repetitive avalanche energy 0.3mH^B
E_AR
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±25
11.5
9.7
40
3
2.1
20
60
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient^AF
Maximum Junction-to-Ambient^A
t ≤ 10s
Steady-State
R_θJA
31
59
40
75
Maximum Junction-to-Lead^C
Steady-State
R_θJL
16
24
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
W
A
mJ
°C
Units
°C/W
°C/W
°C/W
www.aosmd.com