AO4407A Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AO4407A
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4407A uses advanced trench technology to
provide excellent R_DS(ON), and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as
a load switch or in PWM applications. Standard Product
AO4407A is Pb-free (meets ROHS & Sony 259
specifications).
Features
V_DS = -30V
I_D = -12A
(V_GS = -10V)
R_DS(ON) < 11mΩ (V_GS = -20V)
R_DS(ON) < 13mΩ (V_GS = -10V)
R_DS(ON) < 38mΩ (V_GS = -10V)
UIS TESTED!
RG, CISS, COSS, CRSS TESTED!
SOIC-8
Top View
S
D
S
D
S
D
G
D
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
10 Sec
Steady State
Drain-Source Voltage
V_DS
-30
Gate-Source Voltage
V_GS
±25
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Avalanche Current ^G
I_AR
Repetitive avalanche energy L=0.3mH ^G
E_AR
-12
-9.2
-10
-7.4
-60
26
101
Power Dissipation ^{A TA=25°C}
T_A=70°C
3.1
1.7
P_D
2.0
1.1
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A Steady State
R_θJA
32
60
Maximum Junction-to-Lead ^C
Steady State
R_θJL
17
Max
40
75
24
Units
V
V
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com