AO4403 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

December 2001
AO4403
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4403 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance.
Features
V_DS (V) = -30V
I_D = -6.1 A
R_DS(ON) < 46mΩ (V_GS = -10V)
R_DS(ON) < 61mΩ (V_GS = -4.5V)
R_DS(ON) < 117mΩ (V_GS = -2.5V)
SOIC-8
Top View
S
D
S
D
S
D
G
D
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^{A T}A^=70°C
Junction and Storage Temperature Range
P_D
T_J, T_STG
Maximum
-30
±12
-6.1
-5.1
-60
3
2.1
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
31
59
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
16
Max
40
75
24
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.