AO4302 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 30V N-Channel MOSFET

AO4302
30V N-Channel MOSFET
General Description
30
36
Product Summary
The AO4302 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R_DS(ON). This device is ideal for load switch
and battery protection applications.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
ESD Protected
100% UIS Tested
100% R_g Tested
30V
23A
< 4mΩ
< 5mΩ
Top View
D
D
D
D
SOIC-8
Bottom View
G
S
S
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
T_A=25°C
Current
T_A=70°C
Pulsed Drain Current ^C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
T_A=25°C
Power Dissipation ^B T_A=70°C
Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_AS, I_AR
E_AS, E_AR
P_D
T_J, T_STG
D
G
S
Maximum
30
±20
23
18
316
49
120
3.6
2.3
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
27
52
Maximum Junction-to-Lead
Steady-State
R_θJL
11
Max
35
65
15
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: February 2011
www.aosmd.com
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