AO4260 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 60V N-Channel MOSFET

AO4260
60V N-Channel MOSFET
General Description
Product Summary
The AO4260 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an
extremely low combination of R_DS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies
and LED backlighting.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS =4.5V)
100% UIS Tested
100% R_g Tested
60V
18A
< 5.2mΩ
< 6.3mΩ
SOIC-8
D
Top View
Bottom View
D
D
D
D
G
S
S
S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
V_DS
60
Gate-Source Voltage
V_GS
±20
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
18
14
Pulsed Drain Current ^C
I_DM
130
Avalanche Current ^C
I_AS
65
Avalanche energy L=0.1mH ^C
E_AS
211
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
3.1
2
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
31
59
Maximum Junction-to-Lead
Steady-State
R_θJL
16
Max
40
75
24
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Rev 1: Mar. 2012
www.aosmd.com
Page 1 of 6