AO3705 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

AO3705
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
Features
The AO3705/L uses advanced trench technology to
provide excellent R_DS(ON), low gate charge. A Schottky
diode is provided to facilitate the implementation of a
bidirectional blocking switch, or for buck convertor
applications.
AO3705 and AO3705L are electrically identical.
-RoHs Complaint
-AO3705L is Halogen Free
V_DS (V) = -20V
I_D = -3.2A
(V_GS = -4.5V)
R_DS(ON) < 70mΩ (V_GS = -4.5V)
R_DS(ON) < 90mΩ (V_GS = -2.5V)
R_DS(ON) < 110mΩ (V_GS = -1.8V)
R_DS(ON) < 130mΩ (V_GS = -1.5V)
SCHOTTKY
V_DS (V) = 20V, I_F = 1A, V_F<0.45V@1A
SOT-23-5
Top View
D
K
G 15 D
S2
A 34 K
G
S
A
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ^A
Pulsed Drain Current ^B
T_A=25°C
T_A=70°C
Schottky reverse voltage
Continuous Forward Current ^A
Pulsed Forward Current ^B
T_A=25°C
T_A=70°C
Power Dissipation
T_A=25°C
T_A=70°C
Junction and Storage Temperature Range
Symbol
V_DS
V_GS
I_D
I_DM
V_KA
I_F
I_FM
P_D
T_J, T_STG
MOSFET
Schottky
-20
±8
-3.2
-2.5
-25
20
1
0.5
10
1.15
0.66
0.7
0.42
-55 to 150
Parameter: Thermal Characteristics MOSFET
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
80.3
117
110
150
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
43
80
Thermal Characteristics Schottky
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
153
173
190
220
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
103
140
Units
V
V
A
V
A
W
°C
Units
°C/W
°C/W
Alpha Omega Semiconductor, Ltd.
www.aosmd.com