AO3701 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

AO3701
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO3701 uses advanced trench technology to provide
excellent R _DS(ON) and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for DC-DC conversion applications. It is
ESD protected. Standard Product AO3701 is Pb-free (meets
ROHS & Sony 259 specifications). AO3701L is a Green
Product ordering option. AO3701 and AO3701L are
electrically identical.
Features
V_DS (V) = -20V
I_D = -3A (V_GS = -10V)
R_DS(ON) < 80mΩ (V_GS = -10V)
R_DS(ON) < 100mΩ (V_GS = -4.5V)
R_DS(ON) < 145mΩ (V_GS = -2.5V)
ESD Rating: 2000V HBM
SCHOTTKY
V_DS (V) = 20V, I_F = 1A, V_F<0.5V@0.5A
SOT-23-5
Top View
G 15 D
G
S2
A 34 K
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current ^A
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Schottky reverse voltage
V_KA
Continuous Forward Current ^A
T_A=25°C
T_A=70°C
I_F
Pulsed Forward Current ^B
I_FM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A
Steady-State
Maximum Junction-to-Lead ^C
Steady-State
Thermal Characteristics Schottky
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A
Steady-State
Maximum Junction-to-Lead ^C
Steady-State
Symbol
R_θJA
R_θJL
R_θJA
R_θJL
D
K
S
A
MOSFET
-20
±12
-3
-2.3
-10
1.14
0.72
-55 to 150
Typ
80.3
117
43
109.4
136.5
58.5
Schottky
20
2
1
10
0.92
0.59
-55 to 150
Max
110
150
80
135
175
80
Units
V
V
A
V
A
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.