AO3460_10 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – 60V N-Channel MOSFET

AO3460
60V N-Channel MOSFET
General Description
The AO3460 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge, and
operation with gate voltages as low as 4.5V, in the
small SOT-23 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC converters.
It is ESD protected.
Product Summary
V_DS (V) = 60V
I_D = 0.65A (VGS = 10V)
R_DS(ON) < 1.7Ω (V_GS = 10V)
R_DS(ON) < 2Ω (V_GS = 4.5V)
ESD protected
SOT23
Top View
Bottom View
D
D
D
G
S
G
S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TA^=25°C
Current ^{A, F}
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
60
±20
0.65
0.5
1.6
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
70
100
90
125
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
63
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com