AO3460 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO3460
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3460/L uses advanced trench technology to
provide excellent R_DS(ON), low gate charge, and
operation with gate voltages as low as 4.5V, in the
small SOT-23 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC
converters. It is ESD protected. AO3460 and
AO3460L are electrically identical.
-RoHS Compliant
-AO3460L is Halogen Free
Features
V_DS (V) = 60V
I_D = 0.65A (VGS = 10V)
R_DS(ON) < 1.7Ω (V_GS = 10V)
R_DS(ON) < 2Ω (V_GS = 4.5V)
D1
TO-236
(SOT-23)
Top View
G1
G
D
S
S1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
V_DS
60
Gate-Source Voltage
V_GS
±20
Continuous Drain T_A=25°C
Current ^{A, F}
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
0.65
0.5
1.6
T_A=25°C
Power Dissipation ^A T_A=70°C
Junction and Storage Temperature Range
P_D
T_J, T_STG
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
70
100
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com