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AO3442 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 100V N-Channel MOSFET
AO3442
100V N-Channel MOSFET
General Description
The AO3442 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
100V
1A
< 630mΩ
< 720mΩ
SOT23
Top View
Bottom View
D
D
D
S
G
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current
TA=25°C
TA=70°C
ID
Pulsed Drain Current C
IDM
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
G
S
Maximum
100
±20
1
0.8
4
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s
Maximum Junction-to-Ambient A D Steady-State
RθJA
70
100
Maximum Junction-to-Lead
Steady-State
RθJL
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: Jun 2012
www.aosmd.com
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