AO3434_10 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – 30V N-Channel MOSFET

AO3434
30V N-Channel MOSFET
General Description
The AO3434 uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge.
This device is suitable for use as a load switch or
in PWM applications. It is ESD protected.
Product Summary
V_DS (V) = 30V
I_D = 4.2A
R_DS(ON) < 52mΩ
R_DS(ON) < 75mΩ
(V_GS = 10V)
(V_GS = 10V)
(V_GS = 4.5V)
ESD protected
SOT23
Top View
Bottom View
D
D
D
S
G
G
S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Maximum
Parameter
Symbol 10 sec
Steady-State
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±20
Continuous Drain ^TA^=25°C
Current ^A,F
T_A=70°C
Pulsed Drain Current ^B
4.2
3.5
I_D
3.3
2.8
I_DM
30
Power Dissipation
T_A=25°C
T_A=70°C
1.4
1.0
P_D
0.9
0.64
Junction and Storage Temperature Range T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJL
Typ
70
100
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com