AO3423 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AO3423
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3423 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. It is ESD protected. Standard Product
AO3423 is Pb-free (meets ROHS & Sony 259
specifications). AO3423L is a Green Product
ordering option. AO3423 and AO3423L are
electrically identical.
TO-236
(SOT-23)
Top View
G
D
S
Features
V_DS (V) = -20V
I_D = -2 A
(V_GS = -10V)
R_DS(ON) < 92mΩ (V_GS = -10V)
R_DS(ON) < 118mΩ (V_GS = -4.5V)
R_DS(ON) < 166mΩ (V_GS = -2.5V)
ESD Rating: 2000V HBM
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_A=25°C^F
Current ^A
T_A=70°C^F
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
-20
±12
-2
-2
-8
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
65
85
90
125
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
43
60
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.