AO3420_11 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 20V N-Channel MOSFET

AO3420
20V N-Channel MOSFET
General Description
Product Summary
The AO3420 uses advanced trench technology to provide
excellent R_DS(ON), low gate charge and operation with gate
voltages as low as 1.8V while retaining a 12V V_GS(MAX)
rating. This device is suitable for use as a uni-directional
or bi-directional load switch.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS =4.5V)
R_DS(ON) (at V_GS=2.5V)
R_DS(ON) (at V_GS=1.8V)
20V
6A
< 24mΩ
< 27mΩ
< 42mΩ
< 55mΩ
SOT23
Top View
Bottom View
D
D
D
S
G
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
G
S
Maximum
20
±12
6
5
30
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
70
100
Maximum Junction-to-Lead
Steady-State
R_θJL
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 1: May 2011
www.aosmd.com
Page 1 of 5