AO3415AL Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AO3415AL
P-Channel Enhancement Mode
Field Effect Transistor
General Description
Product Summary
The AO3415AL uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and operation
with gate voltages as low as 1.8V. This device is suitable
for use as a load switch applications.
Parameter
V_DS
I_D (at V_GS=-4.5V)
R_DS(ON) (at V_GS= -4.5V)
R_DS(ON) (at V_GS= -2.5V)
R_DS(ON) (at V_GS= -1.8V)
- RoHS Compliant
- Halogen Free
ESD Protected
-20V
-4A
< 45mΩ
< 54mΩ
< 68mΩ
SOT23
Top View
Bottom View
D
D
S
G
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
-20
±8
-4
-3.5
-30
1.5
1
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^{A t ≤ 10s}
Maximum Junction-to-Ambient ^{A D Steady-State}
R_θJA
65
85
Maximum Junction-to-Lead
Steady-State
R_θJL
43
Max
80
100
52
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: January 2009
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