AO3407A Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AO3407A
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3407A/L uses advanced trench technology to provide
excellent R_DS(ON) with low gate charge. This device is suitable
for use as a load switch or in PWM applications. AO3407A
and AO3407AL are electrically identical.
-RoHS Compliant
-AO3407AL is Halogen Free
Features
V_DS (V) = -30V
I_D = -4.3A
(V_GS = -10V)
R_DS(ON) < 48mΩ (V_GS = -10V)
R_DS(ON) < 78mΩ (V_GS = -4.5V)
Rg,Ciss,Coss,Crss Tested
TO-236
(SOT-23)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A,F
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
-30
±20
-4.3
-3.5
-20
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^AF
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
t ≤ 10s
Steady-State
Steady-State
Symbol
Typ
R_θJA
70
100
R_θJL
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com