AME5106 Datasheet, PDF (1/4 Pages) Analog Microelectronics – PWM Control 2A Buck Converter

AO4724
N-Channel Enhancement Mode Field Effect Transistor
SRFET ^TM
General Description
Features
SRFET ^TM The AO4724 uses advanced trench
technology with a monolithically integrated Schottky
diode to provide excellent R_DS(ON),and low gate charge.
This device is suitable for use as a low side FET in
SMPS, load switching and general purpose
applications. Standard product AO4724 is Pb-free
(meets ROHS & Sony 259 specifications).
V_DS (V) = 30V
I_D = 10.5A
(V_GS = 10V)
R_DS(ON) < 17.5mΩ (V_GS = 10V)
R_DS(ON) < 29 mΩ (V_GS = 4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
SOIC-8
S
D
S
D
S
D
G
D
D
SRFET ^TM
Soft Recovery MOSFET:
G
Integrated Schottky Diode
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Maximum
Parameter
Symbol
10 Sec Steady State
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±20
Continuous Drain T_A=25°C
Current ^AF
T_A=70°C
Pulsed Drain Current ^B
10.5
7.7
I_D
8.5
6.2
I_DM
80
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Avalanche Current ^B
I_AR
Repetitive avalanche energy 0.3mH ^B
E_AR
3.1
1.7
2.0
1.1
13
25
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^{AF t ≤ 10s}
Maximum Junction-to-Ambient ^{A Steady-State}
R_θJA
31
59
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
16
Max
40
75
24
Units
V
V
A
W
A
mJ
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com