APM9928 Datasheet, PDF (8/13 Pages) Anpec Electronics Coropration – Dual Enhancement Mode MOSFET (N-and P-Channel)

APM9928
Typical Characteristics (Cont.)
P-Channel
On-Resistance vs. Gate-to-Source Voltage

0.20
-ID=3.2A
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
2
3 4 5 6 7 8 9 10
-VGS - Gate-to-S^ource Voltage (V)
On-Resistance vs. Ju_nction Temperature
1.8
-VGS=4.5V
-ID=3.2A
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150
TJ - Junction T^emperature (°C)
5
-V_,5=10 V
4 ^{-I,5= 1 A}
Gate Charge
3
2
1
0
0
1
2
3
4
5
6
QG - Gate Charge (nC)
Capac_itance
800
Frequency=1MHz
700
600
Ciss
500
400
300
200
Coss
100
Crss
0
0
5
10
15
20
-VDS - Drain-to-Source Voltage (V)
Copyright  ANPEC Electronics Corp.
8
Rev. A.3 - July., 2003
www.anpec.com.tw