APM9926 Datasheet, PDF (6/11 Pages) Anpec Electronics Coropration – N-Channel Enhancement Mode MOSFET

APM9926/C
Typical Characteristics
Source-Drain Diode Forward Voltage
20
10
TJ=150°C
TJ=25°C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD -Source-to-Drain Voltage (V)
Single Pulse Power
80
60
40
20
0
0.01
0.1
1
10
Time (sec)
Normalized Thermal Transient Impedence, Junction to Ambient
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
D=0.02
0.01
1E-4
SINGLE PULSE
1E-3
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=80°C/W
3.TJM-TA=PDMZthJA
0.01
0.1
1
10
Square Wave Pulse Duration (sec)
Copyright  ANPEC Electronics Corp.
6
Rev. A.6 - Sep., 2002
www.anpec.com.tw