APM4532K Datasheet, PDF (6/13 Pages) Anpec Electronics Coropration – Dual Enhancement Mode MOSFET (N-and P-Channel)

APM4532K
Typical Characteristics (Cont.)
N-Channel
Drain-Source On Resistance
2.0
V = 10V
1.8 ^GS
I = 5A
DS
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50 -25 0
R @T =25^oC: 35mΩ
ON
j
25 50 75 100 125 150
Tj - Junction Temperature (°C)
Source-Drain Diode Forward
20
10
T =150oC
j
T =25^oC
1
j
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD - Source - Drain Voltage (V)
Capacitance
700
Frequency=1MHz
600
500
Ciss
400
300
200
100 _Crss
Coss
0
0
5 10 15 20 25 30
VDS - Drain - Source Voltage (V)
10
V =10V
DS
9 I = 5A
DS
8
Gate Charge
7
6
5
4
3
2
1
0
0
3
6
9
12
15
QG - Gate Charge (nC)
Copyright  ANPEC Electronics Corp.
6
Rev. B.1 - Mar., 2005
www.anpec.com.tw