APM4350KP Datasheet, PDF (6/11 Pages) Anpec Electronics Coropration – N-Channel Enhancement Mode MOSFET

APM4350KP
Typical Characteristics (Cont.)
Drain-Source On Resistance
1.8
V_GS = 10V
1.6 _{IDS = 30A}
1.4
1.2
1.0
0.8
0.6
0.4
0.2
R @T =25^oC: 7.5mΩ
ON
j
0.0
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Source-Drain Diode Forward
100
T =150^oC
10
j
T =25oC
j
1
0.2
0.0 0.3 0.6 0.9 1.2 1.5 1.8
VSD - Source - Drain Voltage (V)
2500
2000
1500
Capacitance
Frequency=1MHz
Ciss
1000
500
Crss
0
05
Coss
10 15 20 25 30
VDS - Drain - Source Voltage (V)
Gate Charge
10
V = 15V
DS
I = 30A
DS
8
6
4
2
00
5 10 15 20 25 30
QG - Gate Charge (nC)
Copyright © ANPEC Electronics Corp.
6
Rev. A.1 - Jun., 2006
www.anpec.com.tw