APM2030ND Datasheet, PDF (6/11 Pages) Anpec Electronics Coropration – N-Channel Enhancement Mode MOSFET

APM2030ND
Typical Characteristics (Cont.)
Drain-Source On Resistance
2.0
V = 4.5V
GS
1.8 I = 6A
DS
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0
R @T =25^oC: 28mΩ
ON
j
25 50 75 100 125 150
Tj - Junction Temperature (°C)
Source-Drain Diode Forward
20
10
T =150^oC
1
j
T =25oC
j
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD - Source - Drain Voltage (V)
Capacitance
800
Frequency=1MHz
700
600
Ciss
500
400
300
200
100 _Crss
Coss
0
0
4
8
12
16
20
VDS - Drain - Source Voltage (V)
Gate Charge
10
V =10V
DS
I = 6A
D
8
6
4
2
0
0 4 8 12 16 20 24
QG - Gate Charge (nC)
Copyright  ANPEC Electronics Corp.
6
Rev. B.1 - Mar., 2005
www.anpec.com.tw