APM3195PD Datasheet, PDF (5/10 Pages) Anpec Electronics Coropration – P-Channel Enhancement Mode MOSFET

APM3195PD
Typical Characteristics (Cont.)
Output Characteristics
10
V = -6,-7,-8,-9,-10V
9
GS
8
-5V
7
6
5
-4V
4
3
2
-3V
1
0
0
2
4
6
8
10
-VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
800
700
600
V =-4.5V
500
GS
400
300
V =-10V
GS
200
100
0
0
2
4
6
8
10
-ID - Drain Current (A)
Transfer Characteristics
10
9
8
7
T =-55^oC
j
6
5
T =25oC
j
T =125oC
j
4
3
2
1
0
01234567
-VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.8
I=
DS
-250µA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright  ANPEC Electronics Corp.
5
Rev. B.2 - Apr., 2005
www.anpec.com.tw