APM9933 Datasheet, PDF (4/9 Pages) Anpec Electronics Coropration – Dual P-Channel Enhancement Mode MOSFET

APM9933
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
0.14
-ID=3.4A
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0 1 2 3 4 5 6 7 8 9 10
-VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.00
-VGS=4.5V
1.75 ^-ID=3.4A
1.50
1.25
1.00
0.75
0.50
0.25
0.00
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
5
-VDS=6V
-ID=3.5A
4
Gate Charge
3
2
1
0
0
3
6
9
12
15
QG - Gate Charge (nC)
Capacitance
2500
Frequency=1MHz
2000
1500
Ciss
1000
500
Coss
Crss
0
0
5
10
15
20
-VDS - Drain-to-Source Voltage (V)
Copyright  ANPEC Electronics Corp.
4
Rev. A.2 - Feb., 2003
www.anpec.com.tw