APM4953 Datasheet, PDF (4/9 Pages) Anpec Electronics Coropration – Dual P-Channel Enhancement Mode MOSFET

APM4953
Typical Characteristics (Cont.)
On-Resistance vs. Gate_-to-Source Voltage
0.250
0.225
-I_,= 4.9A
0.200
0.175
0.150
0.125
0.100
0.075
0.050
0.025
1 2 3 4 5 6 7 8 9 10
-VGS - Gate-to-Sou^ rce Voltage (V)
On-Resistance vs. Ju_nction Temperature
2.00
-VGS=10V
1.75 ^-ID=4.9A
1.50
1.25
1.00
0.75
0.50
0.25
0.00
-50 -25 0 25 50 75 100 125 150
TJ - Junction Te^ mperature (°C)
10
-VD=10V
-ID=4.9A
8
Gate Charge
6
4
2
00_
5
10
15
20
25
QG - Gate Charge (nC)
Capac_itance
2800
Frequency=1MHz
2400
2000
1600
Ciss
1200
800
Coss
400
Crss
0
0
5 10 15 20 25 30
-VDS - Drain-to-Source Voltage (V)
Copyright  ANPEC Electronics Corp.
4
Rev. A.2 - Feb., 2003
www.anpec.com.tw