APM3023NV Datasheet, PDF (4/11 Pages) Anpec Electronics Coropration – N-Channel Enhancement Mode MOSFET

APM3023NV
Typical Characteristics
Power Dissipation
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
T =25^oC
0.0 ^A
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
50
10
300us
1ms
1
10ms
100ms
0.1
1s
DC
T =25^oC
0.01 ^A
0.01
0.1
1
10
100
VDS - Drain - Source Voltage (V)
Drain Current
8
7
6
5
4
3
2
1
T =25^oC,V =10V
0^A
G
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature
Thermal Transient Impedance
2
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
Mounted on 1in² pad
1E-3
R :85oC/W
θJA
1E-4 1E-3 0.01 0.1 1 10 100
Square Wave Pulse Duration (sec)
Copyright  ANPEC Electronics Corp.
4
Rev. B.1 - Mar., 2005
www.anpec.com.tw