APM2506NUB Datasheet, PDF (4/10 Pages) Anpec Electronics Coropration – N-Channel Enhancement Mode MOSFET

APM2506NUB
Typical Characteristics
Power Dissipation
60
50
40
30
20
10
T =25^oC
0^C
0 20 40 60 80 100 120 140 160 180
Tj - Junction Temperature (°C)
Safe Operation Area
300
100
Rds(on) ^Limit
10
1ms
10ms
100ms
1s
DC
1
T =25^oC
0.1 ^C
0.1
1
10
70
VDS - Drain - Source Voltage (V)
Drain Current
70
60
50
40
30
20
10
T =25^oC, V =10V
0^C
G
0 20 40 60 80 100 120 140 160 180
Tj - Junction Temperature (°C)
Thermal Transient Impedance
2
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
1E-3
1E-4
1E-3
Mounted on minimum pad
R :100^oC/W
θJA
0.01 0.1 1 10 100
Square Wave Pulse Duration (sec)
Copyright © ANPEC Electronics Corp.
4
Rev. B.2 - Jun., 2006
www.anpec.com.tw