APM2055N Datasheet, PDF (4/10 Pages) Anpec Electronics Coropration – N-Channel Enhancement Mode MOSFET

APM2055N
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
0.200
ID=5A
0.175
0.150
0.125
0.100
0.075
0.050
0.025
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VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.25
VGS=4.5V
2.00 ID=5A
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
5
VDS=15V
ID=1.5A
4
Gate Charge
3
2
1
0
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QG - Gate Charge (nC)
Capacitance
600
Frequency=1MHz
500
400
Ciss
300
200
Coss
100
Crss
0
0
5
10
15
20
VDS - Drain-to-Source Voltage (V)
Copyright  ANPEC Electronics Corp.
4
Rev. A.1 - Feb., 2003
www.anpec.com.tw