APM2030 Datasheet, PDF (4/9 Pages) Anpec Electronics Coropration – N-Channel Enhancement Mode MOSFET

APM2030N
Typical Characteristics
On-Resistance vs. Gate-to-Source Voltage
0.125
ID=6A
0.100
0.075
0.050
0.025
0.000
1 2 3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.00
VGS=4.5V
1.75 ^ID=6A
1.50
1.25
1.00
0.75
0.50
0.25
0.00
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
10
VDS=10V
ID=5A
8
Gate Charge
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
QG - Gate Charge (nC)
Capacitance
750
Frequency=1MHz
625
Ciss
500
375
250
Coss
125
Crss
0
0
5
10
15
20
VDS - Drain-to-Source Voltage (V)
Copyright  ANPEC Electronics Corp.
4
Rev. A.1 - Aug., 2002
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