APM9932 Datasheet, PDF (3/13 Pages) Anpec Electronics Coropration – Dual Enhancement Mode MOSFET (N-and P-Channel)

APM9932/C
Electrical Characteristics (Cont.) (T_A = 25°C unless otherwise noted)
Symbol
Parameter
Dynamic^a
Q_g Total Gate Charge
Q_gs Gate-Source Charge
Q_gd Gate-Drain Charge
t_d(ON) Turn-on Delay Time
T_r Turn-on Rise Time
Test Condition
N-Channel
V_DS=10V , I_DS= 6A
V_GS=4.5V
P-Channel
V_DS=-4V , I_DS=-1A
V_GS=-4.5V
N-Channel
V_DD=10V , I_DS=1A ,
V_GEN=4.5V , R_G=10Ω
t_d(OFF) Turn-off Delay Time
T_f Turn-off Fall Time
P-Channel
V_DD=-4V , I_DS=-1A ,
V_GEN=-4.5V , R_G=10Ω
C_iss Input Capacitance
C_oss Output Capacitance
N-Channel
V_GS=0V , V_DS=15V
Frequency=1.0MHz
P-Channel
V_GS=0V , V_DS=-4V
C_rss
Reverse Transfer Capacitance
Frequency=1.0MHz
APM9932/C
Unit
Min. Typ. Max.
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
14 22
19 25
5
nC
4.1
2.8
1.6
6 12
23 45
5 10
45 80
ns
16 40
45 90
5 20
32 55
1225
1400
330
pF
520
220
320
Notes
a _{: Guaranteed by design, not subject to production testing}
Copyright  ANPEC Electronics Corp.
3
Rev. A.1 - Oct., 2002
www.anpec.com.tw