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APM4550K Datasheet, PDF (3/13 Pages) Anpec Electronics Coropration – Dual Enhancement Mode MOSFET (N- and P-Channel)
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APM4550K
Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
APM4550K
Unit
Min. Typ. Max.
Diode Characteristics
VSDa Diode Forward Voltage
trr Reverse Recovery Time
ISD=2.5A, VGS=0V
ISD=-2A, VGS=0V
N-Channel
ISD=7A, dlSD/dt=100A/µs
Qrr
Reverse Recovery
Charge
Dynamic Characteristics b
N-Channel
ISD=-5A, dlSD/dt=100A/µs
RG Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss Input Capacitance
Coss Output Capacitance
Crss
Reverse Transfer
Capacitance
N-Channel
VGS=0V,
VDS=15V,
Frequency=1.0MHz
P-Channel
VGS=0V,
VDS=-15V,
Frequency=1.0MHz
td(ON) Turn-on Delay Time
Tr Turn-on Rise Time
N-Channel
VDD=15V, RL=15Ω,
IDS=1A, VGEN=10V,
RG=6Ω
td(OFF) Turn-off Delay Time
Tf Turn-off Fall Time
Gate Charge Characteristics b
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
P-Channel
VDD=-15V, RL=15Ω,
IDS=-1A, VGEN=-10V,
RG=6Ω
N-Channel
VDS=15V, VGS=10V,
IDS=7A
P-Channel
VDS=-15V, VGS=-10V,
IDS=-5A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.8 1.3
V
-0.8 -1.3
8
ns
13
3
nC
5
2
Ω
8.3
620
590
85
pF
95
65
70
6
11
5
9
10 18
12 23
ns
22 41
27 50
3
6
13 24
14 19
11 15
1.4
nC
1.3
2.6
2.7
Notes:
a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%.
b : Guaranteed by design, not subject to production testing.
Copyright © ANPEC Electronics Corp.
3
Rev. A.1 - May, 2007
www.anpec.com.tw
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