APM4542 Datasheet, PDF (3/13 Pages) Anpec Electronics Coropration – Dual Enhancement Mode MOSFET (N-and P-Channel)

APM4542
Electrical Characteristics (Cont.) (T_A = 25°C unless otherwise noted)
Symbol
Dynamic^b
Parameter
Q_g Total Gate Charge
Q_gs Gate-Source Charge
Q_gd Gate-Drain Charge
Test Condition
N-Channel
V_DS=15V , I_DS= 7A
V_GS=10V 
P-Channel
V_DS=-15V , I_DS=-5.5A
V_GS=-10V 
t_d(ON) Turn-on Delay Time
T_r Turn-on Rise Time
t_d(OFF) Turn-off Delay Time
T_f Turn-off Fall Time
N-Channel
V_DD=15V , I_DS=2A ,
V_GEN=10V , R_G=6Ω ,
R_L=7.5Ω
P-Channel
V_DD=-15V , I_DS=-2A ,
V_GEN=-10V , R_G=6Ω,
R_L=7.5Ω
C_iss
C_oss
C_rss
Input Capacitance
N-Channel
V_GS=0V, V_DS=25V
Output Capacitance
Frequency=1.0MHz
P-Channel
V_GS=0V, V_DS=-25V
Reverse Transfer Capacitance
Frequency=1.0MHz
Notes
b _{: Guaranteed by design, not subject to production testing}
APM4542
Unit
Min. Typ. Max.
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
19 28
28 36
1.6
nC
5
3.6
4
11 20
12 24
17 28
15 29
ns
36 62
35 60
20 36
15 30
835
950
145
pF
160
15
110
Copyright  ANPEC Electronics Corp.
3
Rev. A.2 - Sep., 2003
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