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APM4463K Datasheet, PDF (3/10 Pages) Anpec Electronics Coropration – P-Channel Enhancement Mode MOSFET
APM4463K
Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Gate Charge Characteristics b
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=-10V, VGS=-4.5V,
IDS=-10A
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
APM4463K
Unit
Min. Typ. Max.
37 45
6.5
nC
2.5
Copyright  ANPEC Electronics Corp.
3
Rev. B.1 - Mar., 2005
www.anpec.com.tw