APM4412K Datasheet, PDF (3/10 Pages) Anpec Electronics Coropration – N-Channel Enhancement Mode MOSFET

APM4412K
Electrical Characteristics (Cont.)
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Test Condition
APM4412K
Min. Typ. Max.
Dynamic Characteristics^b
R_G Gate Resistance
V_GS=0V,V_DS=0V,F=1MHz
C_iss Input Capacitance
C_oss Output Capacitance
C_rss Reverse Transfer Capacitance
V_GS=0V,
V_DS=25V,
Frequency=1.0MHz
t_d(ON)
T_r
t_d(OFF)
T_f
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V_DD=15V, R_L=15Ω,
I_DS=1A, V_GEN=10V,
R_G=6Ω
t_rr Reverse Recovery Time
Q_rr Reverse Recovery Charge
I_SD=12A, dI_SD/dt =100A/µs
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
2.3
1470
233
157
13 24
9
17
36 66
12 23
14
5
Unit
Ω
pF
ns
ns
nC
Copyright © ANPEC Electronics Corp.
3
Rev. B.1 - Sep., 2005
www.anpec.com.tw